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| LESHAN RADIO COMPANY, LTD. PNP General Purpose Amplifier Transistor Surface Mount COLLECTOR 3 MSB709-RT1 3 2 1 2 BASE 1 EMITTER CASE 318D-03, STYLE1 SC-59 MAXIMUM RATINGS (T A = 25 C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Collector Current - Peak Symbol V (BR)CBO V (BR)CEO V (BR)EBO IC I C(P) Symbol PD TJ T stg Value -60 -45 -7.0 -100 -200 Max 200 150 -55 ~ +150 Unit Vdc Vdc Vdc mAdc mAdc Unit mW C C Min -45 -60 -7.0 -- -- 210 -- Max -- -- -- -0.1 -100 340 -0.5 Unit Vdc Vdc Vdc Adc nAdc -- Vdc THERMAL CHARACTERISTICS Characteristic Power Dissipation Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (T A = 25 C) Characteristic Collector-Emitter Breakdown Voltage (IC=-2.0mAdc,IB=0) Collector-Base Breakdown Voltage (IC=-10Adc,IE=0) Emitter-Base Breakdown Voltage (IE =-10Adc,IE=0) Collector-Base Cutoff Current (VCB =-45Vdc, IE=0) Collector-Emitter Cutoff Current (VCE=-10Vdc, IB=0) DC Current Gain (1) (VCE=-10Vdc, IC = -2.0mAdc) Collector-Emitter Saturation Voltage (IC = -100mAdc, IB=-10mAdc) 1. Pulse Test: Pulse Width < 300 s, D.C. < 2%. Symbol V (BR)CEO V(BR)CBO V (BR)EBO ICBO ICEO hFE1 VCE(sat) DEVICE MARKING Marking Symbol ARX The "X" represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured. N2-1/1 |
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